c-335 IRGBC20M-S short circuit rated fast igbt insulated gate bipolar transistor features ? short circuit rated - 10s @ 125c, v ge = 15v ? switching-loss rating includes all "tail" losses ? optimized for medium operating frequency (1 to 10khz) see fig. 1 for current vs. frequency curve v ces = 600v v ce(sat) 2.3v @v ge = 15v, i c = 8.0a e c g n - c h a n n e l pd - 9.1131a description parameter min. typ. max. units r q jc junction-to-case ? ? 2.1 r q ja junction-to-ambient, (pcb mount)** ? ? 40 c/w r q ja junction-to-ambient, typical socket mount ? ? 80 wt weight ? 2 (0.07) ? g (oz) parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 13 i c @ t c = 100c continuous collector current 8.0 a i cm pulsed collector current 26 i lm clamped inductive load current 26 t sc short circuit withstand time 10 s v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy 5.0 mj p d @ t c = 25c maximum power dissipation 60 w p d @ t c = 100c maximum power dissipation 24 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1n?m) absolute maximum ratings ** when mounted on 1" square pcb (fr-4 or g-10 material) for recommended footprint and soldering techniques refer to application note #an-994. thermal resistance s m d - 2 2 0 insulated gate bipolar transistors (igbts) from international rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power mosfet. they provide substantial benefits to a host of high-voltage, high- current applications. these new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. revision 1
c-336 IRGBC20M-S notes: v cc =80%(v ces ), v ge =20v, l=10h, r g = 50 w , ( see fig. 13a ) repetitive rating; v ge =20v, pulse width limited by max. junction temperature. ( see fig. 13b ) repetitive rating; pulse width limited by maximum junction temperature. pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 7.9 16 i c = 8.0a q ge gate - emitter charge (turn-on) ? 3.6 5.2 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) ? 6.0 9.0 v ge = 15v t d(on) turn-on delay time ? 29 ? t j = 25c t r rise time ? 22 ? ns i c = 8.0a, v cc = 480v t d(off) turn-off delay time ? 270 400 v ge = 15v, r g = 50 w t f fall time ? 280 510 energy losses include "tail" e on turn-on switching loss ? 0.14 ? e off turn-off switching loss ? 0.86 ? mj see fig. 9, 10, 11, 14 e ts total switching loss ? 1.0 2.0 t sc short circuit withstand time 10 ? ? s v cc = 360v, t j = 125c v ge = 15v, r g = 50 w , v cpk < 500v t d(on) turn-on delay time ? 27 ? t j = 150c, t r rise time ? 21 ? ns i c = 8.0a, v cc = 480v t d(off) turn-off delay time ? 370 ? v ge = 15v, r g = 50 w t f fall time ? 420 ? energy losses include "tail" e ts total switching loss ? 1.4 ? mj see fig. 10, 14 l e internal emitter inductance ? 7.5 ? nh measured 5mm from package c ies input capacitance ? 365 ? v ge = 0v c oes output capacitance ? 47 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 4.8 ? ? = 1.0mhz parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage 20 ? ? v v ge = 0v , i c = 1.0a d v (br)ces / d t j temperature coeff. of breakdown voltage ? 0.42 ? v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ? 2.0 2.3 i c = 8.0a v ge = 15v ? 2.7 ? v i c = 13a see fig. 2, 5 ? 2.5 ? i c = 8.0a, t j = 150c v ge(th) gate threshold voltage 3.0 ? 5.5 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage ? -11 ? mv/c v ce = v ge , i c = 250a g fe forward transconductance 2.7 3.8 ? s v ce = 100v, i c = 8.0a i ces zero gate voltage collector current ? ? 250 a v ge = 0v, v ce = 600v ? ? 1000 v ge = 0v, v ce = 600v, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified)
c-337 fig. 1 - typical load current vs. frequency (for square wave, i=i rms of fundamental; for triangular wave, i=i pk ) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics IRGBC20M-S 0 4 8 1 2 1 6 2 0 0 . 1 1 1 0 1 0 0 f , f r e q u e n c y ( k h z ) l o a d c u r r e n t ( a ) a 6 0 % o f r a t e d v o l t a g e i d e a l d i o d e s s q u a r e w a v e : t r i a n g u l a r w a v e : c l a m p v o l t a g e : 8 0 % o f r a t e d f o r b o t h : d u t y c y c l e : 5 0 % t = 1 2 5 c t = 9 0 c g a t e d r i v e a s s p e c i f i e d s i n k j p o w e r d i s s i p a t i o n = 1 4 w 1 10 100 1 10 c e c i , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) v , c o l l e c t o r - t o - e m i t t e r v o l t a g e ( v ) t = 1 5 0 c t = 2 5 c j j v = 1 5 v 2 0 s p u l s e w i d t h ? g e a 1 10 100 5 10 15 20 c i , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) g e t = 2 5 c t = 1 5 0 c j j v = 1 0 0 v 5 s p u l s e w i d t h ? c c v , g a t e - t o - e m i t t e r v o l t a g e ( v ) a
c-338 fig. 5 - collector-to-emitter voltage vs. case temperature fig. 4 - maximum collector current vs. case temperature IRGBC20M-S fig. 6 - maximum effective transient thermal impedance, junction-to-case 0 2 4 6 8 10 12 14 25 50 75 100 125 150 m a x i m u m d c c o l l e c t o r c u r r e n t ( a ) t , c a s e t e m p e r a t u r e ( c ) c v = 1 5 v ? g e a 0.0 1.0 2.0 3.0 4.0 5.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 c c e v , c o l l e c t o r - t o - e m i t t e r v o l t a g e ( v ) ? v = 1 5 v ? 8 0 s p u l s e w i d t h g e t , c a s e t e m p e r a t u r e ( c ) i = 1 6 a i = 8 . 0 a i = 4 . 0 a c c c a 0 . 0 1 0 . 1 1 1 0 0 . 0 0 0 0 1 0 . 0 0 0 1 0 . 0 0 1 0 . 0 1 0 . 1 1 1 0 t , r e c t a n g u l a r p u l s e d u r a t i o n ( s e c ) 1 t h j c d = 0 . 5 0 0 . 0 1 0 . 0 2 0 . 0 5 0 . 1 0 0 . 2 0 s i n g l e p u l s e ( t h e r m a l r e s p o n s e ) t h e r m a l r e s p o n s e ( z ) p t 2 1 t d m n o t e s : ? 1 . d u t y f a c t o r d = t / t 2 . p e a k t = p x z + t ? ? ? ? 1 2 j d m t h j c c ? ? ?
c-339 IRGBC20M-S fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. case temperature 0 . 8 8 0 0 . 8 8 4 0 . 8 8 8 0 . 8 9 2 0 . 8 9 6 0 . 9 0 0 1 0 2 0 3 0 4 0 5 0 6 0 g t o t a l s w i t c h i n g l o s s e s ( m j ) r , g a t e r e s i s t a n c e ( ) w w ? v = 4 8 0 v ? v = 1 5 v ? t = 2 5 c ? i = 8 . 0 a c c g e c c 0 . 1 1 1 0 - 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 c t , c a s e t e m p e r a t u r e ( c ) t o t a l s w i t c h i n g l o s s e s ( m j ) r = 5 0 v = 1 5 v v = 4 8 0 v g g e c c w i = 1 6 a i = 8 . 0 a i = 4 . 0 a c c c a 0 200 400 600 1 10 100 c e c , c a p a c i t a n c e ( p f ) v , c o l l e c t o r - t o - e m i t t e r v o l t a g e ( v ) a v = 0 v , f = 1 m h z c = c + c , c s h o r t e d c = c c = c + c g e i e s g e g c c e r e s g c o e s c e g c c ? i e s c ? r e s c ? o e s 0 4 8 12 16 20 0 4 8 12 16 20 g e v , g a t e - t o - e m i t t e r v o l t a g e ( v ) g q , t o t a l g a t e c h a r g e ( n c ) ? v = 4 0 0 v ? i = 8 . 0 a c e c a
c-340 IRGBC20M-S fig. 12 - turn-off soa fig. 11 - typical switching losses vs. collector-to-emitter current 0 . 0 1 . 0 2 . 0 3 . 0 4 . 0 0 4 8 1 2 1 6 2 0 c t o t a l s w i t c h i n g l o s s e s ( m j ) i , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) ? r = 5 0 ? t = 1 5 0 c ? v = 4 8 0 v ? v ? = 1 5 v g c c c g e w a 1 10 100 1 10 100 1000 c c e i , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) s a f e o p e r a t i n g a r e a ? ? v = 2 0 v ? t = 1 2 5 c g e j v , c o l l e c t o r - t o - e m i t t e r v o l t a g e ( v ) a refer to section d for the following: appendix c: section d - page d-5 fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit fig. 14a - switching loss test circuit fig. 14b - switching loss waveform package outline 2 - smd-220 section d - page d-12
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